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| PartNumber | FQD3N60CTM-WS | FQD3N60CTM | FQD3N60CTM-WS-CUT TAPE |
| Description | MOSFET 600V 2.4A N-Channel Q-FET | MOSFET 500V N-CHA NNEL MOSFET | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 2.4 A | - | - |
| Rds On Drain Source Resistance | 3.4 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 10.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | QFET | - | - |
| Packaging | Reel | - | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | FQD3N60CTM_WS | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Fall Time | 35 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 35 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | FQD3N60CTM_WS | - | - |
| Unit Weight | 0.009184 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD3N60CTM-WS | MOSFET 600V 2.4A N-Channel Q-FET | |
| FQD3N60CTM | MOSFET 500V N-CHA NNEL MOSFET | ||
| FQD3N60CTM_WS | 600V, 2.4A, NCH, MOSFET QFET | ||
| FQD3N60CTM-WS-CUT TAPE | 全新原裝 | ||
ON Semiconductor |
FQD3N60CTM-WS | MOSFET N-CH 600V 2.4A DPAK |