 |  | | |
| PartNumber | FQD7P06TM | FQD7P06TM(SB82050) | FQD7P06TM-NL |
| Description | MOSFET 60V P-Channel QFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 5.4 A | - | - |
| Rds On Drain Source Resistance | 450 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.39 mm | - | - |
| Length | 6.73 mm | - | - |
| Series | FQD7P06 | - | - |
| Transistor Type | 1 P-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 3.8 S | - | - |
| Fall Time | 25 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 7.5 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Part # Aliases | FQD7P06TM_NL | - | - |
| Unit Weight | 0.009184 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQD7P06TM | MOSFET 60V P-Channel QFET | |
| FQD7P06TM(SB82050) | 全新原裝 | ||
| FQD7P06TM-NL | 全新原裝 | ||
ON Semiconductor |
FQD7P06TM_F080 | MOSFET P-CH 60V 5.4A DPAK | |
| FQD7P06TM_NB82050 | MOSFET P-CH 60V 5.4A DPAK | ||
| FQD7P06TM | IGBT Transistors MOSFET 60V P-Channel QFET |