PartNumber | FQN1N50CTA | FQN1N50C | FQN1N60 |
Description | MOSFET N-CH/500V 0.38A/6OHM | ||
Manufacturer | ON Semiconductor | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-92-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 380 mA | - | - |
Rds On Drain Source Resistance | 4.6 Ohms | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 890 mW | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Ammo Pack | - | - |
Height | 5.33 mm | - | - |
Length | 5.2 mm | - | - |
Product | MOSFET Small Signal | - | - |
Series | FQN1N50C | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | MOSFET | - | - |
Width | 4.19 mm | - | - |
Brand | ON Semiconductor / Fairchild | - | - |
Forward Transconductance Min | 0.6 S | - | - |
Fall Time | 10 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 10 ns | - | - |
Factory Pack Quantity | 2000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 20 ns | - | - |
Typical Turn On Delay Time | 10 ns | - | - |
Unit Weight | 0.008466 oz | - | - |