 |  | | |
| PartNumber | FQN1N60CBU | FQN1N60 | FQN1N60C |
| Description | MOSFET 600V NCH MOSFET | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 300 mA | - | - |
| Rds On Drain Source Resistance | 9.3 Ohms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Bulk | - | - |
| Height | 5.33 mm | - | - |
| Length | 5.2 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.19 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 0.75 S | - | - |
| Fall Time | 27 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 21 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.006314 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQN1N60CTA | MOSFET 600V NCH MOSFET | |
| FQN1N60CBU | MOSFET 600V NCH MOSFET | ||
| FQN1N60 | 全新原裝 | ||
| FQN1N60C | 全新原裝 | ||
| FQN1N60CTA-G | 全新原裝 | ||
| FQN1N60CTR | 全新原裝 | ||
| FQN1N60CTR-G | 全新原裝 | ||
ON Semiconductor |
FQN1N60CBU | MOSFET N-CH 600V 0.3A TO-92 | |
| FQN1N60CTA | MOSFET N-CH 600V 300MA TO-92 |