FQP63

FQP630 vs FQP630(IRF630) vs FQP630C

 
PartNumberFQP630FQP630(IRF630)FQP630C
DescriptionMOSFET N-CH 200V 9A TO-220
ManufacturerFSC--
Product CategoryFETs - Single--
SeriesQFET--
PackagingTube--
Part StatusObsolete--
FET TypeN-Channel--
TechnologyMOSFET (Metal Oxide)--
Drain to Source Voltage (Vdss)200V--
Current Continuous Drain (Id) @ 25°C9A (Tc)--
Drive Voltage (Max Rds On, Min Rds On)10V--
Vgs(th) (Max) @ Id4V @ 250A--
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V--
Vgs (Max)±25V--
Input Capacitance (Ciss) (Max) @ Vds550pF @ 25V--
FET Feature---
Power Dissipation (Max)78W (Tc)--
Rds On (Max) @ Id, Vgs400 mOhm @ 4.5A, 10V--
Operating Temperature-55°C ~ 150°C (TJ)--
Mounting TypeThrough Hole--
Supplier Device PackageTO-220-3--
Package / CaseTO-220-3--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQP630TSTU MOSFET Short Leads
ON Semiconductor
ON Semiconductor
FQP630 MOSFET N-CH 200V 9A TO-220
FQP630TSTU MOSFET N-CH 200V 9A TO-220
FQP630(IRF630) 全新原裝
FQP630C 全新原裝
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