 |  | | |
| PartNumber | FQPF12N60C | FQPF12N60C FQP12N60C | FQPF12N60C,12N60C |
| Description | MOSFET 600V N-Ch Q-FET advance C-Series | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | MOSFET | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 12 A | - | - |
| Rds On Drain Source Resistance | 650 mOhms | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 51 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Tube | - | - |
| Height | 16.3 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | FQPF12N60C | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | MOSFET | - | - |
| Width | 4.7 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Forward Transconductance Min | 13 S | - | - |
| Fall Time | 90 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 85 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 155 ns | - | - |
| Typical Turn On Delay Time | 30 ns | - | - |
| Part # Aliases | FQPF12N60C_NL | - | - |
| Unit Weight | 0.080072 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
FQPF12N60C | MOSFET 600V N-Ch Q-FET advance C-Series | |
| FQPF12N60CT | MOSFET N-CH/600V/12A QFET C-Series | ||
| FQPF12N60C FQP12N60C | 全新原裝 | ||
| FQPF12N60C,12N60C | 全新原裝 | ||
| FQPF12N60C,12N60C, | 全新原裝 | ||
| FQPF12N60C,FQP12N60C,P12 | 全新原裝 | ||
| FQPF12N60C/TSF12N60M | 全新原裝 | ||
| FQPF12N60CG | 全新原裝 | ||
ON Semiconductor |
FQPF12N60CT | MOSFET N-CH 600V 12A TO-220F | |
| FQPF12N60C | MOSFET N-CH 600V 12A TO-220F |