FQT1N8

FQT1N80TF-WS vs FQT1N80 vs FQT1N80TF

 
PartNumberFQT1N80TF-WSFQT1N80FQT1N80TF
DescriptionMOSFET 800V 0.2A 20Ohm N-Channel
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current200 mA--
Rds On Drain Source Resistance20 Ohms--
Vgs Gate Source Voltage30 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.1 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.8 mm--
Length6.5 mm--
SeriesFQT1N80--
Transistor Type1 N-Channel--
Width3.5 mm--
BrandON Semiconductor / Fairchild--
Fall Time25 ns--
Product TypeMOSFET--
Rise Time25 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time15 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesFQT1N80TF_WS--
Unit Weight0.003951 oz--
製造商 型號 描述 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
FQT1N80TF-WS MOSFET 800V 0.2A 20Ohm N-Channel
FQT1N80 全新原裝
FQT1N80TF 全新原裝
FQT1N80TF_WS 800V, 0.2A, 20 OHM, NCH MOSFET
ON Semiconductor
ON Semiconductor
FQT1N80TF-WS MOSFET N-CH 800V 0.2A SOT-223
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