 | | | |
| PartNumber | FS100R07N3E4-B11 | FS100R07N3E4B11BOSA1 | FS100R07N3E4 |
| Description | IGBT MODULE VCES 600V 100A | IGBT Modules IGBT Module 100A 650V | |
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | IGBTs - Modules |
| Product | - | - | IGBT Silicon Modules |
| Mounting Style | - | - | Screw |
| Pd Power Dissipation | - | - | 335 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 40 C |
| Collector Emitter Voltage VCEO Max | - | - | 650 V |
| Collector Emitter Saturation Voltage | - | - | 1.95 V |
| Continuous Collector Current at 25 C | - | - | 100 A |
| Gate Emitter Leakage Current | - | - | 400 nA |
| Maximum Gate Emitter Voltage | - | - | +/- 20 V |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| FS100R07N3E4-B11 | 全新原裝 | ||
| FS100R07N3E4 | IGBT Modules IGBT Module 100A 650V | ||
Infineon Technologies |
FS100R07N3E4B11BOSA1 | IGBT MODULE VCES 600V 100A | |
| FS100R07N3E4BOSA1 | IGBT MODULE VCES 600V 100A |