 |  | | |
| PartNumber | FS150R07N3E4 | FS150R07N3E4-B11 | FS150R07N3E4B11BOSA1 |
| Description | IGBT Modules IGBT Module 150A 650V | IGBT MODULE VCES 650V 150A | |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Collector Emitter Voltage VCEO Max | 650 V | - | - |
| Collector Emitter Saturation Voltage | 1.95 V | - | - |
| Continuous Collector Current at 25 C | 150 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 430 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FS150R07N3E4BOSA1 SP000843726 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
FS150R07N3E4 | IGBT Modules IGBT Module 150A 650V | |
| FS150R07N3E4B11BOSA1 | IGBT MODULE VCES 650V 150A | ||
| FS150R07N3E4BOSA1 | IGBT MODULE 650V 150A | ||
| FS150R07N3E4-B11 | 全新原裝 | ||
| FS150R07N3E4 | IGBT Modules IGBT Module 150A 650V |