 |  | | |
| PartNumber | FS75R12W2T4 | FS75R12W2T4B11BOMA1 | FS75R12W2T4BOMA1 |
| Description | IGBT Modules IGBT 1200V 75A | MOD IGBT LOW PWR EASY2B-2 | Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.15 V | - | - |
| Continuous Collector Current at 25 C | 107 A | - | - |
| Gate Emitter Leakage Current | 100 nA | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 15 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | FS75R12W2T4BOMA1 SP000404118 | - | - |
| Unit Weight | 1.375685 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
FS75R12W2T4_B11 | IGBT Modules IGBT 1200V 75A | |
| FS75R12W2T4 | IGBT Modules IGBT 1200V 75A | ||
| FS75R12W2T4B11BOMA1 | MOD IGBT LOW PWR EASY2B-2 | ||
| FS75R12W2T4BOMA1 | Trans IGBT Module N-CH 1200V 107A 375000mW 35-Pin Tray | ||
| FS75R12W2T4_B11 | IGBT Modules IGBT 1200V 75A | ||
| FS75R12W2T4 | IGBT Modules IGBT 1200V 75A |