FZT658

FZT658TA vs FZT658 vs FZT658TADIODES

 
PartNumberFZT658TAFZT658FZT658TADIODES
DescriptionBipolar Transistors - BJT NPN High VoltageBIPOLAR TRANSISTOR, NPN, 400V, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:400V, Transition Frequency ft:50MHz, Power Dissipation Pd:2W, DC Collector Current:500mA, DC Current Ga
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO400 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.5 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT658--
DC Current Gain hFE Max50--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current0.5 A--
DC Collector/Base Gain hfe Min50 at 1 mA, 5 V, 50 at 100 mA, 5 V, 40 at 200 mA, 10 V--
Pd Power Dissipation2 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
FZT658TA Bipolar Transistors - BJT NPN High Voltage
FZT658TA Bipolar Transistors - BJT NPN High Voltage
FZT658 BIPOLAR TRANSISTOR, NPN, 400V, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:400V, Transition Frequency ft:50MHz, Power Dissipation Pd:2W, DC Collector Current:500mA, DC Current Ga
FZT658TADIODES 全新原裝
FZT658TAPBF 全新原裝
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