FZT689

FZT689BTA vs FZT689 vs FZT689B

 
PartNumberFZT689BTAFZT689FZT689B
DescriptionBipolar Transistors - BJT NPN High Gain & CrntHIGH VOLTAGE TRANSISTOR, NPN, 20V, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:20V, Transition Frequency ft:150MHz, Power Dissipation Pd:2W, DC Collector Current:3A, DC Current G
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO20 V--
Emitter Base Voltage VEBO7 V--
Collector Emitter Saturation Voltage500 mV--
Maximum DC Collector Current8 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesFZT689--
DC Current Gain hFE Max150--
Height1.65 mm--
Length6.7 mm--
PackagingReel--
Width3.7 mm--
BrandDiodes Incorporated--
Continuous Collector Current3 A--
DC Collector/Base Gain hfe Min150 at 6 A, 2 V--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
製造商 型號 描述 RFQ
Diodes Incorporated
Diodes Incorporated
FZT689BTA Bipolar Transistors - BJT NPN High Gain & Crnt
FZT689BTC Bipolar Transistors - BJT NPN High Gain & Crnt
FZT689BTA Darlington Transistors NPN High Gain & Crnt
FZT689 全新原裝
FZT689B HIGH VOLTAGE TRANSISTOR, NPN, 20V, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:20V, Transition Frequency ft:150MHz, Power Dissipation Pd:2W, DC Collector Current:3A, DC Current G
FZT689BTAPBF 全新原裝
FZT689TA 全新原裝
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