GS81313LT3

GS81313LT36GK-500 vs GS81313LT36GK-550 vs GS81313LT36GK-500I

 
PartNumberGS81313LT36GK-500GS81313LT36GK-550GS81313LT36GK-500I
DescriptionSRAM 1.2/1.25V 4M x 36 144MSRAM 1.2/1.25V 4M x 36 144MSRAM 1.2/1.25V 4M x 36 144M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
RoHSYYY
Memory Size144 Mbit144 Mbit144 Mbit
Organization4 M x 364 M x 364 M x 36
Maximum Clock Frequency500 MHz550 MHz500 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.35 V1.35 V1.35 V
Supply Voltage Min1.2 V1.2 V1.2 V
Minimum Operating Temperature0 C0 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 100 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseBGA-260BGA-260BGA-260
PackagingTrayTrayTray
Memory TypeDDR-IIIDDR-IIIDDR-III
SeriesGS81313LT36GKGS81313LT36GKGS81313LT36GK
TypeSigmaDDR-IIIe B2SigmaDDR-IIIe B2SigmaDDR-IIIe B2
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity101010
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSigmaDDR-IIIeSigmaDDR-IIIeSigmaDDR-IIIe
製造商 型號 描述 RFQ
GSI Technology
GSI Technology
GS81313LT36GK-675I SRAM 1.2/1.25V 4M x 36 144M
GS81313LT36GK-500 SRAM 1.2/1.25V 4M x 36 144M
GS81313LT36GK-550 SRAM 1.2/1.25V 4M x 36 144M
GS81313LT36GK-500I SRAM 1.2/1.25V 4M x 36 144M
GS81313LT36GK-625 SRAM 1.2/1.25V 4M x 36 144M
GS81313LT36GK-550I SRAM 1.2/1.25V 4M x 36 144M
GS81313LT36GK-675 SRAM 1.2/1.25V 4M x 36 144M
GS81313LT36GK-625I SRAM 1.2/1.25V 4M x 36 144M
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