GS88136

GS88136CGT-200V vs GS88136CGT-200IV vs GS88136CGT-250

 
PartNumberGS88136CGT-200VGS88136CGT-200IVGS88136CGT-250
DescriptionSRAM 1.8/2.5V 256K x 36 9MSRAM 1.8/2.5V 256K x 36 9MSRAM 2.5 or 3.3V 256K x 36 9M
ManufacturerGSI TechnologyGSI TechnologyGSI Technology
Product CategorySRAMSRAMSRAM
RoHSYYY
Memory Size9 Mbit9 Mbit9 Mbit
Organization256 k x 36256 k x 36256 k x 36
Access Time6.5 ns6.5 ns5.5 ns
Maximum Clock Frequency200 MHz200 MHz250 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max2.7 V2.7 V3.6 V
Supply Voltage Min1.7 V1.7 V2.3 V
Supply Current Max125 mA, 150 mA145 mA, 170 mA155 mA, 195 mA
Minimum Operating Temperature0 C- 40 C0 C
Maximum Operating Temperature+ 70 C+ 85 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTQFP-100TQFP-100TQFP-100
PackagingTrayTrayTray
Memory TypeSDRSDRSDR
SeriesGS88136CGTGS88136CGTGS88136CGT
TypeSynchronous BurstSynchronous BurstPipeline/Flow Through
BrandGSI TechnologyGSI TechnologyGSI Technology
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity666672
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
TradenameSyncBurstSyncBurstSyncBurst
製造商 型號 描述 RFQ
GSI Technology
GSI Technology
GS88136CGT-200V SRAM 1.8/2.5V 256K x 36 9M
GS88136CGT-300 SRAM 2.5 or 3.3V 256K x 36 9M
GS88136CGT-200IV SRAM 1.8/2.5V 256K x 36 9M
GS88136CGT-250 SRAM 2.5 or 3.3V 256K x 36 9M
GS88136CGT-250I SRAM 2.5 or 3.3V 256K x 36 9M
GS88136CGT-300I SRAM 2.5 or 3.3V 256K x 36 9M
GS88136CGT-333 SRAM 2.5 or 3.3V 256K x 36 9M
GS88136CGT-333I SRAM 2.5 or 3.3V 256K x 36 9M
GS88136CGT-250V SRAM 1.8/2.5V 256K x 36 9M
GS88136CGT-250IV SRAM 1.8/2.5V 256K x 36 9M
GS88136T-250 全新原裝
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