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| PartNumber | GT30J121(Q) | GT30J121 | GT30J121,GT30J322 |
| Description | IGBT Transistors 600V/30A DIS | 30A, 600V, N-CHANNEL IGBT | |
| Manufacturer | Toshiba | TOSHIBA | - |
| Product Category | IGBT Transistors | IGBTs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-3P | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 30 A | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | GT30J121 | - | - |
| Continuous Collector Current Ic Max | 30 A | - | - |
| Height | 19 mm | - | - |
| Length | 15.9 mm | - | - |
| Width | 4.8 mm | - | - |
| Brand | Toshiba | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.238311 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
GT30J121(Q) | IGBT Transistors 600V/30A DIS | |
| GT30J121 | 30A, 600V, N-CHANNEL IGBT | ||
| GT30J121,GT30J322 | 全新原裝 | ||
| GT30J121(Q) | IGBT Transistors 600V/30A DIS |