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| PartNumber | HGTD1N120BNS9A | HGTD1N120BNS | HGTD1N120BNS 1N120B |
| Description | IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series | IGBT Transistors NPTPIGBT TO252 5.3A 1200V | |
| Manufacturer | ON Semiconductor | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | E | - | - |
| Technology | Si | - | - |
| Package / Case | TO-252AA-3 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.5 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 5.3 A | - | - |
| Pd Power Dissipation | 60 W | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | HGTD1N120BNS | - | - |
| Packaging | Reel | - | - |
| Continuous Collector Current Ic Max | 5.3 A | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.6 mm | - | - |
| Width | 6.1 mm | - | - |
| Brand | ON Semiconductor / Fairchild | - | - |
| Continuous Collector Current | 5.3 A | - | - |
| Gate Emitter Leakage Current | +/- 250 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.009184 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
ON Semiconductor / Fairchild |
HGTD1N120BNS9A | IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series | |
ON Semiconductor |
HGTD1N120BNS9A | IGBT 1200V 5.3A 60W TO252AA | |
| HGTD1N120BNS | IGBT Transistors NPTPIGBT TO252 5.3A 1200V | ||
| HGTD1N120BNS 1N120B | 全新原裝 |