HGTP10N1

HGTP10N120BN vs HGTP10N120BN 10N120BN vs HGTP10N120BN G10N120BN

 
PartNumberHGTP10N120BNHGTP10N120BN 10N120BNHGTP10N120BN G10N120BN
DescriptionIGBT 1200V 35A 298W TO220AB
ManufacturerFairchild Semiconductor-FSC
Product CategoryIGBTs - Single-IC Chips
Series---
PackagingTube--
Package CaseTO-220-3--
Input TypeStandard--
Mounting TypeThrough Hole--
Supplier Device PackageTO-220AB--
Power Max298W--
Reverse Recovery Time trr---
Current Collector Ic Max35A--
Voltage Collector Emitter Breakdown Max1200V--
IGBT TypeNPT--
Current Collector Pulsed Icm80A--
Vce on Max Vge Ic2.7V @ 15V, 10A--
Switching Energy320μJ (on), 800μJ (off)--
Gate Charge100nC--
Td on off 25°C23ns/165ns--
Test Condition960V, 10A, 10 Ohm, 15V--
製造商 型號 描述 RFQ
ON Semiconductor
ON Semiconductor
HGTP10N120BN IGBT 1200V 35A 298W TO220AB
HGTP10N120BN 10N120BN 全新原裝
HGTP10N120BN,10N120BN, 全新原裝
HGTP10N120BN G10N120BN 全新原裝
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