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| PartNumber | HN1B04FE-Y,LF | HN1B04FE-GR,LF | HN1B04FU-GR,LF |
| Description | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp | Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-563-6 | SOT-563-6 | SOT-363-6 |
| Transistor Polarity | NPN, PNP | NPN, PNP | NPN, PNP |
| Configuration | Dual | Dual | Dual |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
| Collector Base Voltage VCBO | 60 V, - 50 V | 60 V, - 50 V | 60 V, - 50 V |
| Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 100 mV | 100 mV | 100 mV |
| Maximum DC Collector Current | 150 mA | 150 mA | 150 mA |
| Gain Bandwidth Product fT | 80 MHz, 80 MHz | 80 MHz, 80 MHz | 150 MHz, 120 MHz |
| Maximum Operating Temperature | + 150 C | + 150 C | + 125 C |
| Series | HN1B04 | HN1B04 | HN1B04 |
| DC Current Gain hFE Max | 400 | 400 | 400 |
| Packaging | Reel | Reel | Reel |
| Brand | Toshiba | Toshiba | Toshiba |
| DC Collector/Base Gain hfe Min | 120 | 120 | 120 |
| Pd Power Dissipation | 100 mW | 100 mW | 200 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 4000 | 4000 | 3000 |
| Subcategory | Transistors | Transistors | Transistors |
| Unit Weight | 0.000106 oz | 0.000106 oz | 0.000265 oz |
