 |  | | |
| PartNumber | HN4A51JTE85LF | HN4A51JTE85LFCT-ND | HN4A51J |
| Description | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | ||
| Manufacturer | Toshiba | - | TOSHIBA |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Arrays |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-25-5 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | - 120 V | - | - |
| Collector Base Voltage VCBO | - 120 V | - | - |
| Emitter Base Voltage VEBO | - 5 V | - | - |
| Collector Emitter Saturation Voltage | - 0.3 V | - | - |
| Maximum DC Collector Current | - 100 mA | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Series | HN4A51 | - | - |
| DC Current Gain hFE Max | 700 | - | - |
| Packaging | Reel | - | - |
| Brand | Toshiba | - | - |
| Continuous Collector Current | - 100 mA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 300 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000494 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Toshiba |
HN4A56JU(TE85L,F) | Bipolar Transistors - BJT USV PLN TRANSISTOR Pd=300mW F=1MHz | |
| HN4A51JTE85LF | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | ||
| HN4A51JTE85LF | Bipolar Transistors - BJT Trans LFreq -120V PNP PNP -0.1A | ||
| HN4A51JTE85LFCT-ND | 全新原裝 | ||
| HN4A51JTE85LFDKR-ND | 全新原裝 | ||
| HN4A51JTE85LFTR-ND | 全新原裝 | ||
| HN4A56JU(TE85LF)CT-ND | 全新原裝 | ||
| HN4A56JU(TE85LF)DKR-ND | 全新原裝 | ||
| HN4A56JU(TE85LF)TR-ND | 全新原裝 | ||
| HN4A51J | 全新原裝 | ||
| HN4A56JU | 全新原裝 | ||
| HN4A56JU(TE85L,F) | 全新原裝 | ||
| HN4A56JU(TE85LF) | 全新原裝 |