IFF6

IFF600B12ME4PB11BPSA1 vs IFF600B12ME4S8PB11BOSA1 vs IFF600B12ME4B11BOSA1

 
PartNumberIFF600B12ME4PB11BPSA1IFF600B12ME4S8PB11BOSA1IFF600B12ME4B11BOSA1
DescriptionIGBT ModulesIGBT Modules Description:MEDIUM POWER ECONO
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage1.75 V1.75 V-
Continuous Collector Current at 25 C600 A600 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation20 mW20 mW-
Package / Case152 mm x 62.5 mm x 20.5 mm--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StylePress FitScrew Mount-
Maximum Gate Emitter Voltage15 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity66-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001377694IFF600B12ME4S8P_B11-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IFF600B12ME4PB11BPSA1 IGBT Modules
IFF600B12ME4S8PB11BOSA1 IGBT Modules Description:
IFF600B12ME4B11BOSA1 MEDIUM POWER ECONO
IFF600B12ME4PB11BPSA1 ECONO DUAL 3 W/SHUNTS
IFF600B12ME4S8PB11BOSA1 MEDIUM POWER ECONO
IFF600B12ME4P_B11 全新原裝
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