 |  | | |
| PartNumber | IGW25T120 | IGW25T120 G25T120 | IGW25T120F |
| Description | IGBT Transistors LOW LOSS IGBT TECH 1200V 50A | ||
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Transistors | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-247-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.7 V | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Continuous Collector Current at 25 C | 50 A | - | - |
| Pd Power Dissipation | 190 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | TRENCHSTOP IGBT | - | - |
| Packaging | Tube | - | - |
| Height | 20.9 mm | - | - |
| Length | 15.9 mm | - | - |
| Width | 5.3 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Gate Emitter Leakage Current | 600 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 240 | - | - |
| Subcategory | IGBTs | - | - |
| Tradename | TRENCHSTOP | - | - |
| Part # Aliases | IGW25T120FKSA1 IGW25T12XK SP000013887 | - | - |
| Unit Weight | 1.340411 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IGW25T120 | IGBT Transistors LOW LOSS IGBT TECH 1200V 50A | |
| IGW25T120FKSA1 | IGBT 1200V 50A 190W TO247-3 | ||
Infineon Technologies |
IGW25T120FKSA1 | IGBT Transistors Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop | |
| IGW25T120 G25T120 | 全新原裝 | ||
| IGW25T120F | 全新原裝 | ||
| IGW25T120FKSA1 , 2SC5181 | 全新原裝 | ||
| IGW25T120 | IGBT Transistors LOW LOSS IGBT TECH 1200V 25A |