IHW30N100

IHW30N100R vs IHW30N100 vs IHW30N100R H30R110

 
PartNumberIHW30N100RIHW30N100IHW30N100R H30R110
DescriptionIGBT Transistors REVERSE CONDUCT IGBT 1000V 30A
ManufacturerInfineonInfineon Technologies-
Product CategoryIGBT TransistorsIC Chips-
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1 kV--
Collector Emitter Saturation Voltage1.75 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C30 A--
Pd Power Dissipation412 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTube-
Continuous Collector Current Ic Max60 A--
Height21 mm--
Length15.8 mm--
Width5 mm--
BrandInfineon Technologies--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
Part # AliasesIHW30N100RXK SP000212224--
Unit Weight1.340411 oz--
Series---
Package Case-TO-247-3-
Input Type-Standard-
Mounting Type-Through Hole-
Supplier Device Package-PG-TO247-3-
Power Max-412W-
Reverse Recovery Time trr---
Current Collector Ic Max-60A-
Voltage Collector Emitter Breakdown Max-1000V-
IGBT Type-Trench Field Stop-
Current Collector Pulsed Icm-90A-
Vce on Max Vge Ic-1.7V @ 15V, 30A-
Switching Energy-2.1mJ (off)-
Gate Charge-209nC-
Td on off 25°C--/846ns-
Test Condition-600V, 30A, 26 Ohm, 15V-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IHW30N100TFKSA1 IGBT Transistors LOW LOSS DuoPack 1000V 30A
IHW30N100R IGBT Transistors REVERSE CONDUCT IGBT 1000V 30A
IHW30N100 全新原裝
IHW30N100R H30R110 全新原裝
IHW30N100T IGBT Transistors LOW LOSS DuoPack 1000V 30A
Infineon Technologies
Infineon Technologies
IHW30N100R IGBT 1000V 60A 412W TO247-3
IHW30N100TFKSA1 IGBT 1000V 60A 412W TO247-3
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