IPA100

IPA100N08N3 G vs IPA100N08N3 vs IPA100N08N3G

 
PartNumberIPA100N08N3 GIPA100N08N3IPA100N08N3G
DescriptionMOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-220FP-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance10 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge9 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation35 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingTubeTube-
Height16.15 mm--
Length10.65 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width4.85 mm--
BrandInfineon Technologies--
Fall Time5 ns5 ns-
Product TypeMOSFET--
Rise Time30 ns30 ns-
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time23 ns23 ns-
Typical Turn On Delay Time13 ns13 ns-
Part # AliasesIPA100N08N3GXKSA1 IPA1N8N3GXK SP000473900--
Unit Weight0.211644 oz0.211644 oz-
Part Aliases-IPA100N08N3GXK IPA100N08N3GXKSA1 SP000473900-
Package Case-TO-220-3-
Pd Power Dissipation-35 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-40 A-
Vds Drain Source Breakdown Voltage-80 V-
Rds On Drain Source Resistance-10 mOhms-
Qg Gate Charge-9 nC-
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IPA100N08N3 G MOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3
IPA100N08N3GXKSA1 MOSFET N-CH 80V 40A TO220-3
IPA100N08N3 全新原裝
IPA100N08N3G 全新原裝
IPA100N08N3 G IGBT Transistors MOSFET N-Ch 80V 40A TO220FP-3 OptiMOS 3
Top