 |  | | |
| PartNumber | IPB025N08N3 G | IPB025N08N3 | IPB025N08N3G |
| Description | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | ||
| Manufacturer | Infineon | - | INFINEON |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 80 V | - | - |
| Id Continuous Drain Current | 120 A | - | - |
| Rds On Drain Source Resistance | 2.5 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 33 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 73 ns | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 86 ns | - | - |
| Typical Turn On Delay Time | 28 ns | - | - |
| Part # Aliases | IPB025N08N3GATMA1 IPB25N8N3GXT SP000311980 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB025N08N3 G | MOSFET N-Ch 80V 120A D2PAK-2 OptiMOS 3 | |
| IPB025N08N3GATMA1 | MOSFET N-CH 80V 120A TO263-3 | ||
Infineon Technologies |
IPB025N08N3GATMA1 | MOSFET MV POWER MOS | |
| IPB025N08N3 | 全新原裝 | ||
| IPB025N08N3 G | Trans MOSFET N-CH 80V 120A 3-Pin TO-263 T/R - Bulk (Alt: IPB025N08N3 G) | ||
| IPB025N08N3G | 全新原裝 |