IPB034N06L3GA

IPB034N06L3GATMA1 vs IPB034N06L3GATMA1-CUT TAPE vs IPB034N06L3GATMA1 , 2SD1

 
PartNumberIPB034N06L3GATMA1IPB034N06L3GATMA1-CUT TAPEIPB034N06L3GATMA1 , 2SD1
DescriptionMOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance2.7 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge79 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation167 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min77 S--
Fall Time13 ns--
Product TypeMOSFET--
Rise Time78 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time64 ns--
Typical Turn On Delay Time25 ns--
Part # AliasesG IPB034N06L3 IPB34N6L3GXT SP000398062--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IPB034N06L3GATMA1 MOSFET N-Ch 60V 90A D2PAK-2 OptiMOS 3
IPB034N06L3GATMA1 MOSFET N-CH 60V 90A TO263-3
IPB034N06L3GATMA1-CUT TAPE 全新原裝
IPB034N06L3GATMA1 , 2SD1 全新原裝
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