 |  | | |
| PartNumber | IPB039N10N3GE8187ATMA1 | IPB039N10N3GE8197ATMA1 | IPB039N10N3GE818XT |
| Description | MOSFET MV POWER MOS | RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-7 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Configuration | Single | - | - |
| Packaging | Reel | - | - |
| Height | 4.4 mm | - | - |
| Length | 10 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | E8187 G IPB039N10N3 IPB39N1N3GE8187XT SP000939340 | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB039N10N3GE8187ATMA1 | MOSFET MV POWER MOS | |
| IPB039N10N3GE8187ATMA1 | MOSFET N-CH 100V 160A TO263-7 | ||
| IPB039N10N3GE8197ATMA1 | 全新原裝 | ||
| IPB039N10N3GE818XT | RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2 |