 | | | |
| PartNumber | IPB049N06L3 | IPB049N06L3G | IPB049N06L3 G |
| Description | Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2 | |
| Manufacturer | INF | INF | - |
| Product Category | FETs - Single | FETs - Single | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
| IPB049N06L3 | 全新原裝 | ||
| IPB049N06L3G | Power Field-Effect Transistor, 80A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | ||
| IPB049N06L3 G | IGBT Transistors MOSFET N-Ch 60V 80A D2PAK-2 | ||
Infineon Technologies |
IPB049N06L3GATMA1 | MOSFET N-CH 60V 80A TO263-3 |