 |  | | |
| PartNumber | IPB065N15N3GATMA1 | IPB065N10N3GATMA1 | IPB065N15N3 G |
| Description | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | MOSFET MV POWER MOS | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-3 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 150 V | 100 V | 150 V |
| Id Continuous Drain Current | 130 A | 80 A | 130 A |
| Rds On Drain Source Resistance | 5.2 mOhms | 5.9 mOhms | 5.2 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 93 nC | 64 nC | 93 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 300 W | 150 W | 300 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 70 S | 50 S | 70 S |
| Fall Time | 14 ns | 9 ns | 14 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 35 ns | 37 ns | 35 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 46 ns | 37 ns | 46 ns |
| Typical Turn On Delay Time | 25 ns | 19 ns | 25 ns |
| Part # Aliases | G IPB065N15N3 IPB65N15N3GXT SP000521724 | G IPB065N10N3 SP001232588 | IPB065N15N3GATMA1 IPB65N15N3GXT SP000521724 |
| Unit Weight | 0.056438 oz | 0.139332 oz | 0.056438 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB065N15N3GATMA1 | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | |
| IPB065N10N3GATMA1 | MOSFET MV POWER MOS | ||
| IPB065N15N3 G | MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 | ||
| IPB065N10N3GATMA1 | MOSFET N-CH TO263-3 | ||
| IPB065N15N3GATMA1 | MOSFET N-CH 150V 130A TO263-7 | ||
| IPB065N15N3GE8187ATMA1 | MOSFET N-CH 150V 130A TO263-7 | ||
| IPB065N10N3GATMA1-CUT TAPE | 全新原裝 | ||
| IPB065N15N3GATMA1-CUT TAPE | 全新原裝 | ||
| IPB065N15N3GXT | Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 - Tape and Reel (Alt: IPB065N15N3GATMA1) | ||
| IPB065N15N3GE818XT | MOSFET | ||
| IPB065N15N | 全新原裝 | ||
| IPB065N15N3 | 全新原裝 | ||
| IPB065N15N3G | Trans MOSFET N-CH 150V 130A 7-Pin(6+Tab) TO-263 | ||
| IPB065N15N3GE8197ATMA1 | (Alt: SP001227194) | ||
| IPB065N15N3GS | 全新原裝 | ||
| IPB065N15N3 G | RF Bipolar Transistors MOSFET N-Ch 150V 130A D2PAK-6 OptiMOS 3 |