IPB081

IPB081N06L3 G vs IPB081N06L3 vs IPB081N06L3G

 
PartNumberIPB081N06L3 GIPB081N06L3IPB081N06L3G
DescriptionMOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398076)
ManufacturerInfineon-INF
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current50 A--
Rds On Drain Source Resistance6.7 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge29 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation79 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height4.4 mm--
Length10 mm--
SeriesOptiMOS 3--
Transistor Type1 N-Channel--
Width9.25 mm--
BrandInfineon Technologies--
Forward Transconductance Min35 S--
Fall Time7 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity1000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time37 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesIPB081N06L3GATMA1 IPB81N6L3GXT SP000398076--
Unit Weight0.139332 oz--
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IPB081N06L3 G MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB081N06L3GATMA1 MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB081N06L3GATMA1 MOSFET N-CH 60V 50A TO263-3
IPB081N06L3 全新原裝
IPB081N06L3 G MOSFET N-Ch 60V 50A D2PAK-2 OptiMOS 3
IPB081N06L3G Trans MOSFET N-CH 60V 50A 3-Pin TO-263 T/R (Alt: SP000398076)
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