 | |  | |
| PartNumber | IPB160N08S4-03 | IPB160N08S403ATMA1 | IPB160N08S4-03ATMA1 |
| Description | MOSFET N-CHANNEL 75/80V | MOSFET N-CHANNEL 75/80V | Power Field-Effect Transistor, 160A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-7 | TO-263-7 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | 80 V | - |
| Id Continuous Drain Current | 160 A | 160 A | - |
| Rds On Drain Source Resistance | 2.6 mOhms | 2.6 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 112 nC | 112 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 208 W | 208 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 4.4 mm | 4.4 mm | - |
| Length | 10 mm | 10 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 9.25 mm | 9.25 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 38 ns | 38 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 11 ns | 11 ns | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 30 ns | 30 ns | - |
| Typical Turn On Delay Time | 18 ns | 18 ns | - |
| Part # Aliases | IPB160N08S403ATMA1 SP000989092 | IPB160N08S4-03 SP000989092 | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB160N08S4-03 | MOSFET N-CHANNEL 75/80V | |
| IPB160N08S403ATMA1 | MOSFET N-CHANNEL 75/80V | ||
| IPB160N08S403ATMA1 | MOSFET N-CHANNEL 75/80V | ||
| IPB160N08S4-03 | MOSFET N-CHANNEL 75/80V | ||
| IPB160N08S4-03ATMA1 | Power Field-Effect Transistor, 160A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 |