 | | | |
| PartNumber | IPB180N04S4-01 | IPB180N04S4-00 | IPB180N04S4-H0 |
| Description | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-7 | TO-263-7 | TO-263-7 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 180 A | 180 A | 180 A |
| Rds On Drain Source Resistance | 1.3 mOhms | 800 uOhms | 900 uOhms |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 135 nC | 286 nC | 225 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 188 W | 300 W | 250 W |
| Configuration | Single | Single | Single |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 4.4 mm | 4.4 mm | 4.4 mm |
| Length | 10 mm | 10 mm | 10 mm |
| Series | OptiMOS-T2 | OptiMOS-T2 | OptiMOS-T2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 9.25 mm | 9.25 mm | 9.25 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 41 ns | 58 ns | 49 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 24 ns | 24 ns | 24 ns |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 38 ns | 67 ns | 50 ns |
| Typical Turn On Delay Time | 35 ns | 53 ns | 44 ns |
| Part # Aliases | IPB180N04S401ATMA1 IPB18N4S41XT SP000705694 | IPB180N04S400ATMA1 IPB18N4S4XT SP000646176 | IPB180N04S4H0ATMA1 IPB18N4S4HXT SP000711248 |
| Unit Weight | 0.056438 oz | 0.056438 oz | 0.056438 oz |
| Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |
| Channel Mode | - | Enhancement | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB180N04S400ATMA1 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | |
| IPB180N04S4-01 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N04S4LH0ATMA1 | MOSFET N-CHANNEL 30/40V | ||
| IPB180N04S4H0ATMA1 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N04S4-00 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N04S4-H0 | MOSFET N-Ch 40V 180A D2PAK-6 OptiMOS-T2 | ||
| IPB180N04S4L01ATMA1 | MOSFET N-CHANNEL 30/40V | ||
| IPB180N04S400ATMA1 | MOSFET N-CH 40V 180A TO263-7-3 | ||
| IPB180N04S401ATMA1 | MOSFET N-CH 40V 180A TO263-7-3 | ||
| IPB180N04S4H0ATMA1 | MOSFET N-CH 40V 180A TO263-7-3 | ||
| IPB180N04S4LH0ATMA1 | MOSFET N-CHANNEL 30/40V | ||
| IPB180N04S4L01ATMA1 | MOSFET N-CHANNEL 30/40V | ||
Infineon Technologies |
IPB180N04S401ATMA1 | MOSFET N-CHANNEL_30/40V | |
| IPB180N04S4-00 | Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) TO-263 | ||
| IPB180N04S4-00 (4N0400) | 全新原裝 | ||
| IPB180N04S4-01 | Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) TO-263 | ||
| IPB180N04S4-H0 | Trans MOSFET N-CH 40V 180A Automotive 7-Pin(6+Tab) TO-263 | ||
| IPB180N04S4-HO | 全新原裝 |