 | | | |
| PartNumber | IPB200N25N3G | IPB200N25N3G(SP00067789 | IPB200N25N3G(SP000677896 |
| Description | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
| Manufacturer | INF | - | - |
| Product Category | FETs - Single | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPB200N25N3GATMA1 | MOSFET N-Ch 250V 64A D2PAK-2 OptiMOS 3 | |
| IPB200N25N3GATMA1 | MOSFET N-CH 250V 64A TO263-3 | ||
| IPB200N25N3G | POWER FIELD-EFFECT TRANSISTOR, 64A I(D), 250V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-263AB | ||
| IPB200N25N3G(SP00067789 | 全新原裝 | ||
| IPB200N25N3G(SP000677896 | 全新原裝 | ||
| IPB200N25N3GXT | 全新原裝 |