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| PartNumber | IPB80N06S2L-05 | IPB80N06S2L-06 | IPB80N06S2L-07 |
| Description | MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS | MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS | Darlington Transistors MOSFET N-Ch 55V 80A D2PAK-2 OptiMOS |
| Manufacturer | INF | Infineon Technologies | INF |
| Product Category | FETs - Single | Transistors - FETs, MOSFETs - Single | FETs - Single |
| Series | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Part Aliases | IPB80N06S2L05ATMA1 IPB80N06S2L05XT SP000219004 | IPB80N06S2L06ATMA1 IPB80N06S2L06ATMA2 SP001067880 | IPB80N06S2L07ATMA1 IPB80N06S2L07ATMA3 SP001067890 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Package Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Technology | Si | Si | Si |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Configuration | Single | Single | Single |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Pd Power Dissipation | 300 W | 250 W | 210 W |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Fall Time | 90 ns | 20 ns | 31 ns |
| Rise Time | 93 ns | 21 ns | 35 ns |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Id Continuous Drain Current | 80 A | 80 A | 80 A |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | 55 V |
| Rds On Drain Source Resistance | 4.5 mOhms | 6 mOhms | 6.7 mOhms |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Typical Turn Off Delay Time | 67 ns | 60 ns | 28 ns |
| Typical Turn On Delay Time | 19 ns | 11 ns | 18 ns |
| Channel Mode | Enhancement | Enhancement | Enhancement |