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| PartNumber | IPC70N04S5L4R2ATMA1 | IPC70N04S54R6ATMA1 |
| Description | MOSFET MOSFET_(20V,40V) | MOSFET MOSFET_(20V,40V) |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V |
| Id Continuous Drain Current | 70 A | 70 A |
| Rds On Drain Source Resistance | 3.4 mOhms | 3.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 2.2 V |
| Vgs Gate Source Voltage | 16 V | 20 V |
| Qg Gate Charge | 30 nC | 24.2 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C |
| Pd Power Dissipation | 50 W | 50 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Series | N Channel | N Channel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | 3 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 2 ns | 2 ns |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11 ns | 7 ns |
| Typical Turn On Delay Time | 3 ns | 4 ns |
| Part # Aliases | IPC70N04S5L-4R2 SP001418126 | IPC70N04S5-4R6 SP001418124 |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPC70N04S5L4R2ATMA1 | MOSFET MOSFET_(20V,40V) | |
| IPC70N04S54R6ATMA1 | MOSFET MOSFET_(20V,40V) | ||
| IPC70N04S54R6ATMA1 | MOSFET N-CH 40V 70A 8TDSON-34 | ||
| IPC70N04S5L4R2ATMA1 | MOSFET N-CH 40V 70A 8TDSON-34 | ||
| IPC70N04S5-4R6 | 全新原裝 | ||
| IPC70N04S5L-4R2 | Transistor: N-MOSFET, unipolar, 40V, 70A, 50W, PG-TDSON-8 |