 | | | |
| PartNumber | IPD031N06L | IPD031N06L 031N06L | IPD031N06L3 |
| Description | |||
| Manufacturer | Infineon Technologies | - | Infineon Technologies |
| Product Category | Transistors - FETs, MOSFETs - Single | - | Transistors - FETs, MOSFETs - Single |
| Series | OptiMOS 3 | - | OptiMOS 3 |
| Packaging | Reel | - | Reel |
| Part Aliases | IPD031N06L3GATMA1 IPD031N06L3GXT SP000451076 | - | IPD031N06L3GATMA1 IPD031N06L3GXT SP000451076 |
| Unit Weight | 0.139332 oz | - | 0.139332 oz |
| Mounting Style | SMD/SMT | - | SMD/SMT |
| Tradename | OptiMOS | - | OptiMOS |
| Package Case | TO-252-3 | - | TO-252-3 |
| Technology | Si | - | Si |
| Number of Channels | 1 Channel | - | 1 Channel |
| Configuration | Single | - | Single |
| Transistor Type | 1 N-Channel | - | 1 N-Channel |
| Pd Power Dissipation | 167 W | - | 167 W |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Fall Time | 13 ns | - | 13 ns |
| Rise Time | 78 ns | - | 78 ns |
| Vgs Gate Source Voltage | 20 V | - | 20 V |
| Id Continuous Drain Current | 100 A | - | 100 A |
| Vds Drain Source Breakdown Voltage | 60 V | - | 60 V |
| Vgs th Gate Source Threshold Voltage | 2.2 V | - | 2.2 V |
| Rds On Drain Source Resistance | 3.1 mOhms | - | 3.1 mOhms |
| Transistor Polarity | N-Channel | - | N-Channel |
| Typical Turn Off Delay Time | 64 ns | - | 64 ns |
| Typical Turn On Delay Time | 25 ns | - | 25 ns |
| Qg Gate Charge | 79 nC | - | 79 nC |
| Forward Transconductance Min | 165 S | - | 165 S |
| Channel Mode | Enhancement | - | Enhancement |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD031N06L3GATMA1 | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS 3 | |
| IPD031N06L3GATMA1 | MOSFET N-CH 60V 100A TO252-3 | ||
| IPD031N06L | 全新原裝 | ||
| IPD031N06L 031N06L | 全新原裝 | ||
| IPD031N06L3 | 全新原裝 | ||
| IPD031N06L3 G | Trans MOSFET N-CH 60V 100A 3-Pin TO-252 T/R (Alt: IPD031N06L3 G) | ||
| IPD031N06L3G | MOSFET N-CH 100A 60V OPTIMOS3 TO252, RL |