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| PartNumber | IPD06P004NATMA1 | IPD06P002NATMA1 | IPD06P003NATMA1 |
| Description | MOSFET | MOSFET | TRENCH 40<-<100V |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 16.4 A | 35 A | - |
| Rds On Drain Source Resistance | 90 mOhms | 38 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - 4 V | - 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | - 27 nC | - 63 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 63 W | 125 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 15 S | 33 S | - |
| Fall Time | 9 ns | 19 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 12 ns | 19 ns | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | 47 ns | - |
| Typical Turn On Delay Time | 9 ns | 16 ns | - |
| Part # Aliases | IPD06P004N | IPD06P002N | - |