 | | |
| PartNumber | IPD100N06S403ATMA2 | IPD100N06S403ATMA1 |
| Description | MOSFET MOSFET | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS-T2 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Configuration | Single | Single |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Series | IPD100N06 | XPD100N06 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | IPD100N06S4-03 IPD1N6S43XT SP001028766 | IPD100N06S4-03 IPD100N06S403XT SP000415576 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vds Drain Source Breakdown Voltage | - | 60 V |
| Id Continuous Drain Current | - | 100 A |
| Rds On Drain Source Resistance | - | 2.8 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 2 V |
| Vgs Gate Source Voltage | - | 20 V |
| Qg Gate Charge | - | 128 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Pd Power Dissipation | - | 150 W |
| Channel Mode | - | Enhancement |
| Fall Time | - | 5 ns |
| Rise Time | - | 70 ns |
| Typical Turn Off Delay Time | - | 40 ns |
| Typical Turn On Delay Time | - | 30 ns |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD100N06S403ATMA2 | MOSFET MOSFET | |
| IPD100N06S403ATMA2 | MOSFET N-CH 60V 100A TO252-3-11 | ||
| IPD100N06S403ATMA1 | MOSFET N-CH 60V 100A TO252-3-11 | ||
Infineon Technologies |
IPD100N06S403ATMA1 | MOSFET N-Ch 60V 100A DPAK-2 OptiMOS-T2 | |
| IPD100N06S4-03(SP0010287 | 全新原裝 | ||
| IPD100N06S4-03 | IGBT Transistors MOSFET N-Ch 60V 100A DPAK-2 OptiMOS-T2 |