 |  |  | |
| PartNumber | IPD110N12N3GATMA1 | IPD110N12N3G | IPD110N12N3GBUMA1 |
| Description | MOSFET MV POWER MOS | MOSFET N-CH 120V 75A TO252-3 | |
| Manufacturer | Infineon | infineon | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Id Continuous Drain Current | 75 A | - | - |
| Rds On Drain Source Resistance | 11 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 49 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 42 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 24 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Part # Aliases | G IPD110N12N3 SP001127808 | - | - |
| Unit Weight | 0.017284 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD110N12N3GATMA1 | MOSFET MV POWER MOS | |
| IPD110N12N3GATMA1 | MOSFET N-CH 120V 75A TO252-3 | ||
| IPD110N12N3GBUMA1 | MOSFET N-CH 120V 75A TO252-3 | ||
| IPD110N12N3G | 全新原裝 | ||
| IPD11N03L | 全新原裝 | ||
| IPD11NC10NG | 全新原裝 |