 | |  | |
| PartNumber | IPD135N03LGATMA1 | IPD135N03LGBTMA1 | IPD135N03LGXT |
| Description | MOSFET N-Ch 30V 30A DPAK-2 | MOSFET LV POWER MOS | MOSFET N-CH 30V 30A TO252-3 |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 13.5 mOhms | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | G IPD135N03L IPD135N3LGXT SP000796912 | IPD135N3LGXT SP000236951 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD135N03LGATMA1 | MOSFET N-Ch 30V 30A DPAK-2 | |
| IPD135N03LGBTMA1 | LV POWER MOS | ||
| IPD135N03LGATMA1 | MOSFET N-CH 30V 30A TO252-3 | ||
| IPD135N03LGXT | MOSFET N-CH 30V 30A TO252-3 | ||
Infineon Technologies |
IPD135N03LGBTMA1 | MOSFET LV POWER MOS | |
| IPD135N03LG | Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |