IPD200N15N3 stock, IPD200N15N3, IPD200N15N3GATMA1


PartNumber	IPD200N15N3GATMA1	IPD200N15N3GBTMA1
Description	MOSFET MV POWER MOS	MOSFET N-Ch 150V 50A DPAK-2 OptiMOS 3
Manufacturer	Infineon	Infineon
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	150 V	150 V
Id Continuous Drain Current	50 A	50 A
Rds On Drain Source Resistance	20 mOhms	16 mOhms
Vgs th Gate Source Threshold Voltage	2 V	2 V
Vgs Gate Source Voltage	10 V	20 V
Qg Gate Charge	23 nC	31 nC
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 175 C
Pd Power Dissipation	150 W	150 W
Configuration	Single	Single
Channel Mode	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Series	OptiMOS 3	XPD200N15
Transistor Type	1 N-Channel	1 N-Channel
Width	6.22 mm	6.22 mm
Brand	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	29 S	29 S
Fall Time	6 ns	6 ns
Product Type	MOSFET	MOSFET
Rise Time	11 ns	11 ns
Factory Pack Quantity	2500	2500
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	23 ns	23 ns
Typical Turn On Delay Time	14 ns	14 ns
Part # Aliases	G IPD200N15N3 SP001127820	G IPD200N15N3 IPD200N15N3GXT SP000386665
Unit Weight	0.139332 oz	0.139332 oz

Search Part Number : "IPD200N15N3", Match & Start with "IPD200N15N3" - Total : 8

製造商	型號	描述
Infineon Technologies	IPD200N15N3GATMA1	MOSFET MV POWER MOS
	IPD200N15N3GATMA1	MOSFET N-CH 150V 50A TO252-3
	IPD200N15N3GBTMA1	MOSFET N-CH 150V 50A TO252-3
Infineon Technologies	IPD200N15N3GBTMA1	MOSFET N-Ch 150V 50A DPAK-2 OptiMOS 3
	IPD200N15N3	全新原裝
	IPD200N15N3G	POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 150V, 0.02OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252
	IPD200N15N3 G	Trans MOSFET N-CH 150V 50A 3-Pin TO-252 T/R (Alt: IPD200N15N3 G)
	IPD200N15N3G 200N15N	全新原裝

IPD200N15N3