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| PartNumber | IPD30N08S2L21ATMA1 | IPD30N08S2L21ATMA1-CUT TAPE | IPD30N08S2L21 |
| Description | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | MOSFET, N-CH, 75V,30A, TO252-3 | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 75 V | - | - |
| Id Continuous Drain Current | 30 A | - | - |
| Rds On Drain Source Resistance | 15.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 72 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 136 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 11 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 30 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 44 ns | - | - |
| Typical Turn On Delay Time | 9 ns | - | - |
| Part # Aliases | IPD30N08S2L-21 IPD3N8S2L21XT SP000252170 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD30N08S2L21ATMA1 | MOSFET N-Ch 75V 30A DPAK-2 OptiMOS | |
| IPD30N08S2L21ATMA1 | MOSFET N-CH 75V 30A TO252-3 | ||
| IPD30N08S2L21ATMA1-CUT TAPE | 全新原裝 | ||
| IPD30N08S2L21 | MOSFET, N-CH, 75V,30A, TO252-3 |