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| PartNumber | IPD50N06S4L-12 . | IPD50N06S4L-12 4N06L12 | IPD50N06S4L-12 |
| Description | IGBT Transistors MOSFET N-Ch 60V 50A DPAK-2 OptiMOS-T2 | ||
| Manufacturer | - | - | Infineon Technologies |
| Product Category | - | - | Transistors - FETs, MOSFETs - Single |
| Series | - | - | OptiMOS-T2 |
| Packaging | - | - | Reel |
| Part Aliases | - | - | IPD50N06S4L12ATMA1 IPD50N06S4L12ATMA2 IPD50N06S4L12XT SP001028640 |
| Unit Weight | - | - | 0.139332 oz |
| Mounting Style | - | - | SMD/SMT |
| Tradename | - | - | OptiMOS |
| Package Case | - | - | TO-252-3 |
| Technology | - | - | Si |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 50 W |
| Maximum Operating Temperature | - | - | + 175 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 5 ns |
| Rise Time | - | - | 2 ns |
| Vgs Gate Source Voltage | - | - | 16 V |
| Id Continuous Drain Current | - | - | 50 A |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Vgs th Gate Source Threshold Voltage | - | - | 1.7 V |
| Rds On Drain Source Resistance | - | - | 12 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 25 ns |
| Typical Turn On Delay Time | - | - | 6 ns |
| Qg Gate Charge | - | - | 30 nC |
| Channel Mode | - | - | Enhancement |