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| PartNumber | IPD60N10S4L-12 | IPD60N10S4L12ATMA1 | IPD60N10S412ATMA1 |
| Description | MOSFET N-Ch 100V 60A DPAK-2 | MOSFET N-Ch 100V 60A DPAK-2 | MOSFET N-CHANNEL 100+ |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 60 A | 60 A | - |
| Rds On Drain Source Resistance | 9.8 mOhms | 9.8 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | 1.1 V | - |
| Vgs Gate Source Voltage | 16 V | 16 V | - |
| Qg Gate Charge | 49 nC | 49 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 94 W | 94 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | XPD60N10 | IPD60N10 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 21 ns | 21 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 3 ns | 3 ns | - |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 4 ns | 4 ns | - |
| Part # Aliases | IPD60N10S4L12ATMA1 IPD6N1S4L12XT SP000866550 | IPD60N10S4L-12 IPD6N1S4L12XT SP000866550 | IPD60N10S4-12 SP001102936 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD60N10S4L-12 | MOSFET N-Ch 100V 60A DPAK-2 | |
| IPD60N10S4L12ATMA1 | MOSFET N-Ch 100V 60A DPAK-2 | ||
| IPD60N10S412ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPD60N10S412ATMA1 | MOSFET N-CHANNEL 100+ | ||
| IPD60N10S4L12ATMA1 | MOSFET N-CH TO252-3 | ||
| IPD60N10S4L12ATMA1-CUT TAPE | 全新原裝 | ||
| IPD60N03 | 全新原裝 | ||
| IPD60N03LG | 全新原裝 | ||
| IPD60N10S4L-12 | Trans MOSFET N-CH 100V 60A | ||
| IPD60N650CE | 全新原裝 |