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| PartNumber | IPD65R950CFD | IPD65R950C6ATMA1 | IPD65R950C6 |
| Description | MOSFET N-Ch 700V 3.9A DPAK-2 | MOSFET N-Ch 700V 4.5A DPAK-2 | MOSFET N-Ch 700V 4.5A DPAK-2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | - | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
| Id Continuous Drain Current | 3.9 A | 4.5 A | 4.5 A |
| Rds On Drain Source Resistance | 855 mOhms | 855 mOhms | 855 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 14.1 nC | 15.3 nC | 15.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 36.7 W | 37 W | 37 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 2.3 mm | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm | 6.5 mm |
| Series | XPD65R950 | CoolMOS C6 | CoolMOS C6 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Fall Time | 13.8 ns | 13.6 ns | 13.6 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 6.5 ns | 5.2 ns | 5.2 ns |
| Factory Pack Quantity | 2500 | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 43 ns | 41 ns | 41 ns |
| Typical Turn On Delay Time | 9 ns | 6.6 ns | 6.6 ns |
| Part # Aliases | IPD65R950CFDBTMA1 SP000953124 | IPD65R950C6ATMA1 SP001107082 | IPD65R950C6ATMA1 SP001107082 |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Tradename | - | CoolMOS | CoolMOS |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD65R950CFDBTMA1 | MOSFET N-Ch 700V 3.9A DPAK-2 | |
| IPD65R950CFD | MOSFET N-Ch 700V 3.9A DPAK-2 | ||
| IPD65R950C6ATMA1 | MOSFET N-Ch 700V 4.5A DPAK-2 | ||
| IPD65R950C6 | MOSFET N-Ch 700V 4.5A DPAK-2 | ||
| IPD65R950CFDATMA1 | MOSFET LOW POWER_LEGACY | ||
| IPD65R950CFDATMA2 | MOSFET 650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improve | ||
| IPD65R950CFDATMA1 | MOSFET N-CH 650V 3.9A TO-252 | ||
| IPD65R950CFDATMA2 | LOW POWER_LEGACY | ||
| IPD65R950C6ATMA1 | MOSFET N-Ch 700V 4.5A DPAK-2 | ||
| IPD65R950CFDBTMA1 | RF Bipolar Transistors MOSFET N-Ch 700V 3.9A DPAK-2 | ||
| IPD65R950C6 | MOSFET N-Ch 700V 4.5A DPAK-2 | ||
| IPD65R950CFD | MOSFET N-Ch 700V 3.9A DPAK-2 | ||
| IPD65R950E6 | 全新原裝 |