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| PartNumber | IPD80R1K0CEATMA1 | IPD80R1K0CE | IPD80R1K0CEATMA1/INFINEO |
| Description | MOSFET N-Ch 800V 5.7A DPAK-2 | Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE) | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PG-TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 800 V | - | - |
| Id Continuous Drain Current | 5.7 A | - | - |
| Rds On Drain Source Resistance | 950 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 31 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | - | - |
| Tradename | CoolMOS | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Series | CoolMOS CE | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 72 ns | - | - |
| Typical Turn On Delay Time | 25 ns | - | - |
| Part # Aliases | IPD80R1K0CE SP001130974 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPD80R1K0CEATMA1 | MOSFET N-Ch 800V 5.7A DPAK-2 | |
| IPD80R1K0CEATMA1 | MOSFET N-CH 800V 5.7A TO252-3 | ||
| IPD80R1K0CEBTMA1 | MOSFET N-Ch 800V 5.7A DPAK-2 | ||
| IPD80R1K0CE | Trans MOSFET N 800V 5.7A 3-Pin TO-252 T/R (Alt: IPD80R1K0CE) | ||
| IPD80R1K0CEATMA1/INFINEO | 全新原裝 | ||
| IPD80R1K0CEBTMA1 , 2SD24 | 全新原裝 |