IPI32

IPI320N20N3 G vs IPI320N203G vs IPI320N20N3

 
PartNumberIPI320N20N3 GIPI320N203GIPI320N20N3
DescriptionMOSFET N-Ch 200V 34A I2PAK-3 OptiMOS 3- Bulk (Alt: IPI320N203G)
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-262-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current34 A--
Rds On Drain Source Resistance32 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation136 W--
ConfigurationSingle-Single
TradenameOptiMOS-OptiMOS
PackagingTube-Tube
Height9.45 mm--
Length10.2 mm--
SeriesOptiMOS 3-OptiMOS 3
Transistor Type1 N-Channel-1 N-Channel
Width4.5 mm--
BrandInfineon Technologies--
Fall Time4 nS-4 ns
Product TypeMOSFET--
Rise Time9 nS-9 ns
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 nS-21 nS
Part # AliasesIPI320N20N3GAKSA1 IPI32N2N3GXK SP000714312--
Unit Weight0.084199 oz-0.084199 oz
Part Aliases--IPI320N20N3GAKSA1 IPI320N20N3GXK SP000714312
Package Case--I2PAK-3
Pd Power Dissipation--136 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--34 A
Vds Drain Source Breakdown Voltage--200 V
Rds On Drain Source Resistance--32 mOhms
Qg Gate Charge--22 nC
製造商 型號 描述 RFQ
Infineon Technologies
Infineon Technologies
IPI320N20N3 G MOSFET N-Ch 200V 34A I2PAK-3 OptiMOS 3
IPI320N20N3GAKSA1 MOSFET N-CH 200V 34A TO262-3
IPI320N203G - Bulk (Alt: IPI320N203G)
IPI320N20N3 全新原裝
IPI320N20N3G 全新原裝
IPI320N20N3 G Darlington Transistors MOSFET N-Ch 200V 34A I2PAK-3 OptiMOS 3
Top