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| PartNumber | IPL60R185CFD7AUMA1 | IPL60R185C7AUMA1 |
| Description | MOSFET HIGH POWER_NEW | MOSFET HIGH POWER_NEW |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | VSON-4 | VSON-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 14 A | 13 A |
| Rds On Drain Source Resistance | 153 mOhms | 185 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.5 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 28 nC | 24 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 85 W | 77 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Series | CoolMOS CFD7 | CoolMOS C7 |
| Transistor Type | 1 N-Channel | - |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 6 ns | 6 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 9 ns | 4 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 77 ns | 46 ns |
| Typical Turn On Delay Time | 32 ns | 9 ns |
| Part # Aliases | IPL60R185CFD7 SP001617940 | IPL60R185C7 SP001296238 |
| Height | - | 1.1 mm |
| Length | - | 8 mm |
| Width | - | 8 mm |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPL60R185CFD7AUMA1 | MOSFET HIGH POWER_NEW | |
| IPL60R185C7AUMA1 | MOSFET HIGH POWER_NEW | ||
| IPL60R185C7AUMA1 | MOSFET N-CH 600V 13A 4VSON | ||
| IPL60R185CFD7AUMA1 | MOSFET N-CH 4VSON | ||
| IPL60R185CFD7 | Transistor: N-MOSFET, unipolar, 600V, 9A, 85W, PG-VSON-4 | ||
| IPL60R185C7 | 全新原裝 |