 | | |
| PartNumber | IPL65R195C7AUMA1 | IPL65R190E6AUMA1 |
| Description | MOSFET HIGH POWER BEST IN CLASS | MOSFET N-Ch 650V 20.2A VSON-4 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | VSON-4 | VSON-4 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 650 V | 650 V |
| Id Continuous Drain Current | 12 A | 20.2 A |
| Rds On Drain Source Resistance | 173 mOhms | 190 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 23 nC | 73 nC |
| Minimum Operating Temperature | - 40 C | - 40 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 75 W | 151 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | CoolMOS | CoolMOS |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 8 mm | 8 mm |
| Series | CoolMOS C7 | CoolMOS E6 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 8 mm | 8 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 16 ns | 10 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 5 ns | 11 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 75 ns | 112 ns |
| Typical Turn On Delay Time | 9 ns | 12 ns |
| Part # Aliases | IPL65R195C7 SP001032726 | IPL65R190E6AUMA1 SP001074938 |
| RoHS | - | Y |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPL65R195C7AUMA1 | MOSFET HIGH POWER BEST IN CLASS | |
| IPL65R195C7AUMA1 | MOSFET HIGH POWER BEST IN CLASS | ||
| IPL65R190E6AUMA1 | RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4 | ||
Infineon Technologies |
IPL65R190E6AUMA1 | MOSFET N-Ch 650V 20.2A VSON-4 | |
| IPL65R190E6 | Infineon HIGH POWER_LEGACY | ||
| IPL65R195C7 | MOSFET HIGH POWER BEST IN CLASS |