 | | |
| PartNumber | IPP028N08N3 G | IPP028N08N3GXKSA1 |
| Description | MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3 | MOSFET MV POWER MOS |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | - |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220-3 | TO-220-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 80 V | - |
| Id Continuous Drain Current | 100 A | - |
| Rds On Drain Source Resistance | 2.8 mOhms | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 300 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Tradename | OptiMOS | - |
| Packaging | Tube | Tube |
| Height | 15.65 mm | 15.65 mm |
| Length | 10 mm | 10 mm |
| Series | OptiMOS 3 | - |
| Transistor Type | 1 N-Channel | - |
| Width | 4.4 mm | 4.4 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Fall Time | 33 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 73 ns | - |
| Factory Pack Quantity | 500 | - |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 86 ns | - |
| Typical Turn On Delay Time | 28 ns | - |
| Part # Aliases | IPP028N08N3GXKSA1 IPP28N8N3GXK SP000680766 | G IPP028N08N3 IPP28N8N3GXK SP000680766 |
| Unit Weight | 0.211644 oz | 0.211644 oz |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP028N08N3 G | MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3 | |
| IPP028N08N3GXKSA1 | MOSFET N-CH 80V 100A TO220-3 | ||
| IPP028N08N3 G | Darlington Transistors MOSFET N-Ch 80V 100A TO220-3 OptiMOS 3 | ||
Infineon Technologies |
IPP028N08N3GXKSA1 | MOSFET MV POWER MOS | |
| IPP028N08N3 | 全新原裝 | ||
| IPP028N08N3G | 100 A, 80 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | ||
| IPP028N08N3GHKSA1 | MOSFET N-Ch 80V 100A TO220-3 |