 |  | | |
| PartNumber | IPP076N12N3 G | IPP076N12N | IPP076N12N3 |
| Description | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | ||
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | MOSFET | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 120 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 7.6 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 3 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 76 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 188 W | - | - |
| Configuration | Single | - | - |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Tube | Tube | Tube |
| Height | 15.65 mm | - | - |
| Length | 10 mm | - | - |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | OptiMOS 3 Power-Transistor | - | - |
| Width | 4.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 116 S, 58 S | - | - |
| Fall Time | 10 ns | 10 ns | 10 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 50 ns | 50 ns | 50 ns |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 39 ns | 39 ns | 39 ns |
| Typical Turn On Delay Time | 24 ns | 24 ns | 24 ns |
| Part # Aliases | IPP076N12N3GXKSA1 IPP76N12N3GXK SP000652736 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | 0.211644 oz |
| Part Aliases | - | IPP076N12N3GXK IPP076N12N3GXKSA1 SP000652736 | IPP076N12N3GXK IPP076N12N3GXKSA1 SP000652736 |
| Package Case | - | TO-220-3 | TO-220-3 |
| Pd Power Dissipation | - | 188 W | 188 W |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | 100 A | 100 A |
| Vds Drain Source Breakdown Voltage | - | 120 V | 120 V |
| Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
| Rds On Drain Source Resistance | - | 7.6 mOhms | 7.6 mOhms |
| Qg Gate Charge | - | 76 nC | 76 nC |
| Forward Transconductance Min | - | 116 S 58 S | 116 S 58 S |
| 製造商 | 型號 | 描述 | RFQ |
|---|---|---|---|
Infineon Technologies |
IPP076N12N3 G | MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 | |
| IPP076N12N3GXKSA1 | MOSFET N-CH 120V 100A TO220-3 | ||
Infineon Technologies |
IPP076N12N3GXKSA1 | MOSFET MV POWER MOS | |
| IPP076N12N3GXK | Trans MOSFET N-CH 120V 100A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: IPP076N12N3GXKSA1) | ||
| IPP076N12N | 全新原裝 | ||
| IPP076N12N3 | 全新原裝 | ||
| IPP076N12N3 G(SP00065273 | 全新原裝 | ||
| IPP076N12N3G | Power Field-Effect Transistor, 100A I(D), 120V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | ||
| IPP076N12N3G , 2SD780-DW | 全新原裝 | ||
| IPP076N12N3G,076N12N | 全新原裝 | ||
| IPP076N12N3GS | 全新原裝 | ||
| IPP076N12N3 G | IGBT Transistors MOSFET N-Ch 120V 100A TO220-3 OptiMOS 3 |